Ttl Mosfet

The IRF series require 10v (VGS = 10.0 V) at the gate to fully open at anywhere near rated loads, so we use the IRL series. Any logic level N-Channel MOSFET (VGS = 5.0 V) will work, and look for the lowest RDS(on) (Ω) resistance you can practically find, to limit heat buildup. Connect your DC load between + and the Drain (D) of the MOSFET. CMOS (Complementary-symmetry MOSFET) digital IC elements have major advantages over TTL types. They are simple and inexpensive, consume near-zero quiescent current, have a very high input impedance, can operate over a wide range of supply voltages, have excellent noise immunity, and are very easy to use. 20pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor IRF.

• Mosfet Ttl 3.3v
• 3.3v Ttl Mosfet
• Ttl Mosfet Model

BSN304 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BSN304

Which N-ch Mosfet do you advise me to change the MMBT2222L (NPN)? And Which P-ch Mosfet do you advise me to change the MMBT2907AL (PNP)? Considering: – They be economical – All my BJT are SOT-23 package, thus Mosfet must be also. – Both BJT type are working under TTL logic, so gates will be drive directly by PIC microcontroller 5v.

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1 W

Предельно допустимое напряжение сток-исток |Uds|: 300 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 2 V

Mosfet Ttl 3.3v

Максимально допустимый постоянный ток стока |Id|: 0.3 A

Максимальная температура канала (Tj): 150 °C

Выходная емкость (Cd): 21 pf

Сопротивление сток-исток открытого транзистора (Rds): 6 Ohm

Тип корпуса: TO92

BSN304 Datasheet (PDF)

0.1. bsn304 2.pdf Size:78K _philips

DISCRETE SEMICONDUCTORSDATA SHEETageM3D106BSN304N-channel enhancement modevertical D-MOS transistorProduct specification 2001 Dec 11Supersedes data of 1997 Jun 17Philips Semiconductors Product specificationN-channel enhancement modeBSN304vertical D-MOS transistorFEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc.PIN DESCRIPTION High-speed

0.2. bsn304 bsn304a cnv 2.pdf Size:73K _philips

DISCRETE SEMICONDUCTORSDATA SHEETBSN304; BSN304AN-channel enhancement modevertical D-MOS transistorsApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSN304; BSN304AD-MOS transistorsFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER COND

0.3. bsn304.pdf Size:88K _philips

DISCRETE SEMICONDUCTORSDATA SHEETBSN304; BSN304AN-channel enhancement modevertical D-MOS transistorsApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSN304; BSN304AD-MOS transistorsFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER COND

Другие MOSFET... IRF830B, IRFS830B, CLY2, 2SK2369, 2SK2370, 2SK2357, 2SK2358, AOD436, IRF540N, J309G, J310G, SSF5508, SSF7509, 2SK1078, 2SK2018-01L, 2SK2018-01S, 2SK2012.

Mosfet Ttl 3.3v

Максимально допустимый постоянный ток стока |Id|: 0.3 A

Максимальная температура канала (Tj): 150 °C

Выходная емкость (Cd): 21 pf

Сопротивление сток-исток открытого транзистора (Rds): 6 Ohm

Тип корпуса: TO92

BSN304 Datasheet (PDF)

0.1. bsn304 2.pdf Size:78K _philips

DISCRETE SEMICONDUCTORSDATA SHEETageM3D106BSN304N-channel enhancement modevertical D-MOS transistorProduct specification 2001 Dec 11Supersedes data of 1997 Jun 17Philips Semiconductors Product specificationN-channel enhancement modeBSN304vertical D-MOS transistorFEATURES PINNING - TO-92 variant Direct interface to C-MOS, TTL, etc.PIN DESCRIPTION High-speed

0.2. bsn304 bsn304a cnv 2.pdf Size:73K _philips

DISCRETE SEMICONDUCTORSDATA SHEETBSN304; BSN304AN-channel enhancement modevertical D-MOS transistorsApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSN304; BSN304AD-MOS transistorsFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER COND

0.3. bsn304.pdf Size:88K _philips

DISCRETE SEMICONDUCTORSDATA SHEETBSN304; BSN304AN-channel enhancement modevertical D-MOS transistorsApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSN304; BSN304AD-MOS transistorsFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER COND

Другие MOSFET... IRF830B, IRFS830B, CLY2, 2SK2369, 2SK2370, 2SK2357, 2SK2358, AOD436, IRF540N, J309G, J310G, SSF5508, SSF7509, 2SK1078, 2SK2018-01L, 2SK2018-01S, 2SK2012.

Список транзисторов

Обновления

3.3v Ttl Mosfet

Ttl Mosfet Model